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AO8808 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V V GS(MAX) rating. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AO8808 is Pb-free (meets ROHS & Sony 259 specifications). AO8808L is a Green Product ordering option. AO8808 and AO8808L are electrically identical.
Features
VDS (V) = 20V ID = 8A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 15m (VGS = 4.5V) RDS(ON) < 20m (VGS = 2.5V) RDS(ON) < 28m (VGS = 1.8V)
TSSOP-8 Top View D1 S1 S1 G1 1 2 3 4 8 7 6 5 D2 S2 S2 G2 G1 S1
D1
D2
G2 S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 8 6.3 30 1.4 1 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 73 96 63
Max 90 125 75
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO8808
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=8A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, I D=5A VGS=2.5V, I D=4A VGS=1.8V, I D=3A gFS VSD IS Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.5 30 10.6 14.2 12.2 16.1 23.2 36 0.73 1 2.4 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 19.8 VGS=4.5V, V DS=10V, I D=8A 1.8 5 3.3 VGS=10V, VDS=10V, RL=1.3, RGEN=3 IF=8A, dI/dt=100A/s IF=8A, dI/dt=100A/s 5.9 44 7.7 22 9.8 14 17 15 20 28 0.75 Min 20 10 25 100 1 Typ Max Units V A nA V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev3: August 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 30 25 RDS(ON) (m) 20 VGS=2.5V 15 10 5 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance VGS=1.8V 1.6 ID=5A 1.4 VGS=4.5V VGS=2.5V VGS=1.5V 5 0 0 0.5 25C 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 ID(A) 20 15 10 125C 10 2.5V 4.5V 30 2V VDS=5V 25
VGS=10V 1.2 VGS=1.8V
VGS=10V
1
40 35 30 RDS(ON) (m) 25 20 15 10 5 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
25C 125C ID=5A
1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
125
25C
Alpha & Omega Semiconductor, Ltd.
AO8808
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=10V ID=8A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20
Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0 10s
40
100s
Power (W)
ID (Amps)
10.0
RDS(ON) limited
TJ(Max)=150C TA=25C
30
1m 10m
20 10 0 0.001
1.0
1s 0 1 TJ(Max)=150C TA=25C 10s DC
10 100
0.1 0.1 1
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to Ambient (Note E)
0.01
ZJA Normalized Transient Thermal Resistance
10
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
T
0.01 0.00001
Single Pulse
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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